TSemiconductor wafer cleaning is dominated by the RCA method, developed by RCA Corporation in the United Sates in 1960s, and the method of sulfuric acid hydrogen peroxide mixture (SPM). Both methods, however, require much toxic chemicals at high temperature. Ozone water, a substitute for
agents used in these methods has been focused for its safety and earth-consciousness. TSKE has developed the BMB generator that produces highconcentration ozone water at 200ppm or more (234 ppm maximum, refer to photo) and features a safer working environment. The BMB generator not only produces ozone water at 100ppm to 200ppm, but also recovers 90% or more waste ozone gas compared to the existing recovery rate of 50% recovery rate. A high rate of 3 to 4 μm/min. is realized in the ion implantation (I ray + P) process.
Features
Large volume of super-high ozone water concentration (100 to 180ppm) at low cost
World-record of 234 ppm
High resist-peeling rate (including implantation) at 3 to 4μm/min.)
Sulfuric-acid free process that eliminates both rinsing device and solvents.
High ozone gas recovery rate
Size reduction of ozonizer
Large reduction of waste ozone gas decomposition catalyst
Elimination of effluent-gas treatment such as HCl and NH3
Safer working environment of clean room
Elimination of maintenance such as no film replacement
Major Applications
Resist peeling and wafer cleaning of semiconductor and liquid crystals